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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KSC2331 TO-92L TRANSISTOR NPN 1.EMITTER FEATURE Power dissipation PCM : 1 W Tamb=25 Collector current ICM : 0.7 A Collector-base voltage V(BR)CBO : 80 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency 2.COLLECTOR 3.BASE Tamb=25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Cob unless Test Ic= 100 otherwise specified MIN 80 60 8 0.1 0.1 40 240 0.7 1.2 8 30 V V pF MHz TYP MAX UNIT V V V A A conditions A IE=0 IB=0 IC=0 IE=0 IC=0 IC= 50mA IC= 10mA , IE= 10 A VCB=60V , VEB=5V , VCE=2 V, IC= 500m A, IB= 50mA IC= 500 mA, IB= 50mA (VCB=10V IE=0,f=1MHz) VCE= 10 V, IC= 50mA fT CLASSIFICATION OF hFE(1) Rank Range R 40-80 O 70-140 Y 120-240 |
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